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طراحی و ساخت آنتن میکرواستریپ با پهنای باند بالا به روش آرایه‌ی متناوب لگاریتمی با تغذیه Inset و Proximity | ||
| الکترومغناطیس کاربردی | ||
| مقاله 5، دوره 4، شماره 3، آبان 1395، صفحه 45-56 اصل مقاله (1.63 M) | ||
| نویسندگان | ||
| جعفر خلیل پور* 1؛ اسماعیل زارع زاده2؛ مریم حاجبی2 | ||
| 1دانشگاه پدافند هوایی خاتم الانبیاء(ص) | ||
| 2دانشگاه صنعتی امیرکبیر | ||
| تاریخ دریافت: 23 مهر 1396، تاریخ بازنگری: 06 اسفند 1397، تاریخ پذیرش: 28 شهریور 1397 | ||
| چکیده | ||
| در این مقاله برای افزایش پهنای باند آنتن‌های میکرواستریپی، از آرایه‌های متناوب لگاریتمی استفاده شده است و برای تغذیه آرایه‌ها نیز روش‌های تغذیه‌ی Inset و Proximity انتخاب شدند. شبیه‌سازی‌ها و نتایج آزمایشگاهی نشان دادند که با استفاده از تغذیه Inset پهنای باند افزایش یافته و تطبیق امپدانسی بهتر از ترمینال ورودی حاصل می‌شود. بعلاوه با استفاده از تغذیه Proximity به دلیل حذف اتصالات T شکل و لحیم‌کاری‌ها، تشعشعات ناخواسته از بین رفته و در نتیجه بهره و پهنای باند بیشتر و ابعاد کوچکتری نسبت به آنتن با تغذیه Inset به دست می‌آید. در این مقاله از یک ماده دی‌الکتریک از جنس FR4 با ضخامت mm6/1 و ثابت دی‌الکتریک 4/4ε_r= استفاده شده است و فرکانس تشدید و امپدانس مشخصه خط تغذیه به ترتیب GHz 03/3 و Ω50 در نظر گرفته شده‌اند. با استفاده از آرایه متناوب لگاریتمی، پهنای‌باند امپدانسی و بهره‌ی آنتن میکرواستریپ به ترتیب از %7/2 و حدودdB 2 برای تک المان، به %4/27 وdB 8 برای 5 المان افزایش می یابد. | ||
| کلیدواژه‌ها | ||
| آنتن میکرواستریپ؛ آرایه متناوب لگاریتمی؛ تغذیه Inset؛ تغذیه Proximity؛ تطبیق امپدانسی | ||
| مراجع | ||
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آمار تعداد مشاهده مقاله: 542 تعداد دریافت فایل اصل مقاله: 431 |
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