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Design of a New Low Power XOR-XNOR Circuit with Improved Noise Immunity | ||
علوم و فناوریهای پدافند نوین | ||
Article 1, Volume 3, Issue 2 - Serial Number 8, November 2012, Pages 95-102 PDF (6.75 M) | ||
Authors | ||
vahid attar; mohamad hossein ghezel ayagh* ; amir masoud miri | ||
Receive Date: 30 January 2019, Revise Date: 17 July 2025, Accept Date: 30 January 2019 | ||
Abstract | ||
Abstract __ Due to the main role of XOR-XNOR gates as the building blocks of many basic arithmetic circuits such as multiplexers, full adders, compressors etc, new methods of improving the speed and power consumption performance has been reported. As the dimensions have been reduced to deep submicron scale, noise immunity has also become an important parameter along with speed, power consumption and size. Herein, the functional properties of a number of these XORXNOR gates are compared and a new low power XOR-XNOR gates with improved noise immunity XOR-XNOR gates using 10 transistors is proposed. In passive defense issues, the immunity to electromagnetic disturbances is of paramount importance. Therefore increasing the circuits’ immunity to noise will help the circuits’ function properly against electromagnetic disturbances. The simulation results with 0.18(μm) technology in an Hspice software for all supply ranges from 0.6(V) to 3.3(V) has shown that the new proposed circuit has lower power consumption, an improved PDP with better noise immunity compared to the previous reported circuits. | ||
Keywords | ||
XOR-XNOR Gates; PDP; Noise Immunity | ||
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